A SIMPLE KEY FOR INFRARED ZINC SELENIDE ZNSE UNVEILED

A Simple Key For Infrared zinc selenide znse Unveiled

for ZnSe films with distinct thickness is linear within the absorption edge, which verified immediate band hole changeover. The film thickness dependence of optical band gap might be connected to various elements for example (i) crystal defects which make localized states Which may be change the effective Fermi amount, (ii) crystallites dimensions

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